silvaco–atlas two-dimensional device simulator (Silvaco Inc)
90
Structured Review
Silvaco Inc
silvaco–atlas two-dimensional device simulator
Silvaco–Atlas Two Dimensional Device Simulator, supplied by Silvaco Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/two-dimensional+device+simulator/silvaco+tcad/10__1002_slash_aesr__202400203-85-4-2
Average 90 stars, based on 1 article reviews
Silvaco–Atlas Two Dimensional Device Simulator, supplied by Silvaco Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/two-dimensional+device+simulator/silvaco+tcad/10__1002_slash_aesr__202400203-85-4-2
Average 90 stars, based on 1 article reviews
silvaco–atlas two-dimensional device simulator - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: RF and analogue performance investigation of DG tunnel FET Article Snippet: Taylor & Francis makes every effort to ensure the accuracy of all the information (the “Content”) contained in the publications on our platform.. However, Taylor & Francis, our agents, and our licensors make no representations or warranties whatsoever as to the accuracy, completeness, or suitability for any purpose of the Content.. Any opinions and views expressed in this publication are the opinions and views of the authors, and are not the views of or endorsed by Taylor & Francis. Article Title: Integrate-and-Fire Neuron Circuit Without External Bias Voltages Article Snippet: The I&F neuron circuit was carried out with a two-dimensional Article Title: Optimization CIGS/CIGS Tandem Solar Cells by Adjusting Layer Thickness Using Silvaco-Tcad Article Snippet: In this context, a numerical simulation of CIGS/CIGS tandem solar cell as a function of the CIGS absorbing layer thickness and its band gap of the sub-cells was performed using a two-dimensional Article Title: Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction: A new approach to thermoelectric materials and generators Article Snippet: Common thermoelectric generators are based on the Seebeck effect, which describes the thermal diffusion of majority charge carriers within a temperature gradient in a solid.. It is a unipolar transport phenomenon that gets suppressed if bipolar charge carriers occur.. Here, we demonstrate by experiments that thermally excited bipolar charge carriers can be separated by the built-in field without external bias within a p-n junction. Article Title: Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch Article Snippet: Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch Long Hu, Jiancang Su, Zhenjie Ding, Qingsong Hao, and Xuelin Yuan Citation: Journal of Applied Physics 115, 094503 (2014); doi: 10.1063/1.4866715 View online: http://dx.doi.org/10.1063/1.4866715 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/115/9?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Non-linear absorption of 1.3-μm wavelength femtosecond laser pulses focused inside semiconductors: Finite difference time domain-two temperature model combined computational study J. Appl.. Phys.. 110, 103106 (2011); 10.1063/1.3662192 Coulomb effects and carrier diffusion in semiconductor quantum wires J. Appl. Article Title: Swarm‐Optimized ZnO/CdS/CIGS/GaAs Solar Cell for Enhanced Efficiency and Thermal Resilience Article Snippet: [54] The Article Title: TCAD based performance assessment of Indium Gallium Nitride based single junction solar cells for different mole fractions of Indium Article Snippet: The tailoring the band gap energy of the ternary Indium Gallium Nitride (InxGa(1−x)N) alloy shows a good spectral match with a range of wavelength in electromagnetic spectrum and provided a new approach for its utilization in Photovoltaic solar cells.. In this paper a 2D numerical simulation of Indium Gallium Nitride (InxGa1−xN) single junction solar cell using TCAD has been presented.. The device has been simulated and analyzed using physical models such as Auger recombination models using Fermi–Dirac Statistics, Shockley–Read–Hall recombination models and Band Gap Narrowing effect. Article Title: Performance Assessment of Graded Channel Gate-Stack based Double Gate MOSFET for Bio-sensing Applications Article Snippet: In this paper, the performance of the Asymmetric Gate Graded Channel Gate-Stack Double Gate (AG-GCGS-DG) MOSFETbased biosensor has been investigated for dielectric-modulated (DM) label-free sensing of neutral and charged biomolecules present in the cavity region.. The efficiency of the AG-GCGS-DG MOSFET-based biosensor has been evaluated to compare with the Symmetric Gate (SG) GCGS-DG MOSFET-based biosensor in terms of different sensitivity metrics such as threshold voltage, On state current, subthreshold swing and drain current sensitivity.. The asymmetric gate (AG) type biosensor shows 290%, 7%, 96% and 103% improvement in threshold voltage, On state current, subthreshold swing and drain current sensitivity as compared to the symmetric gate (SG) based biosensor. |